MTP3N84 N-channel MOSFET Transistor 840V 3A TO-220

Description

MTP3N84 N-channel MOSFET Transistor 840V 3A TO-220 The MTP3N84 is a high-voltage enhancement-mode N-channel MOSFET, engineered for robust switching in high-voltage circuits. Its proposed 840V drain-source rating makes it suited for topologies like offline converters, boost converters, snubber switches, and high-voltage motor drivers. The device is ruggedly designed to handle avalanche events, with moderate on-resistance and gate charge tailored for efficiency at high voltage swings. Features Very high drain-source voltage rating (840V typical for this variant). Moderate conduction performance with practical on-resistance under high VDS stress. Low to moderate gate charge for efficient switching. Durable packaging in TO-220 for proper heat sinking and mechanical reliability. Suitable for use in high-voltage switch stages, startup circuits, and clamping topologies. Specifications Rating Symbol Value Unit Drain-Source Voltage V DSS 800 Vdc Drain-Gate Voltage (R GS = 1 MΩ) V DGR 800 Vdc Gate-Source Voltage — Continuous V GS ±20 Vdc Gate-Source Voltage — Non-repetitive (t p ≤ 50 µs) V GSM ±40 Vpk Drain Current — Continuous I D 3 Adc Drain Current — Pulsed I DM 8 Adc Total Power Dissipation at T C = 25°C Derate above 25°C P D 75 0.6 W W/°C Operating and Storage Temperature Range T J , T stg -65 to 150 °C Notes: for full electrical specifications, check the datasheet for the MTP3N80 family down below. Keep in mind that this model differs from the MTP3N80 in voltage. Applications High-voltage DC–DC converters: boost, flyback, forward circuits. Input startup or bleeder switch in offline power supplies. Inductive load switching and snubber circuits. Clamping and surge suppression in high-voltage systems. Package Contents 1× MTP3N84 N-channel MOSFET 840V 3A TO-220. Documents Datasheet MTP3N80 Family

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