IRF1404 N-Channel Power MOSFET Transistor 40V 162A TO-220

Description

IRF1404 N-Channel Power MOSFET Transistor 40V 162A TO-220 Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Features: Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Specifications: Parameter Value Model IRF1404 Transistor Polarity N-Channel Drain-to-Source Voltage (V DSS ) 40V Continuous Drain Current (I D @ T C =25 °C) 162A Pulsed Drain Current (I DM ) 650A Power Dissipation (P D @ T C =25 °C) 200W Static On-Resistance (R DS(ON) @ V GS =10 V) 0.0035Ω – 0.004Ω Gate Threshold Voltage (V GS(th) ) 2.0V – 4.0V Single-Pulse Avalanche Energy (E AS ) 519mJ Gate-to-Source Voltage (V GS ) ±20V Thermal Resistance, Junction-to-Case (R θJC ) 0.75 °C/W Operating Junction Temperature Range –55 °C to +175 °C Storage Temperature Range –55 °C to +175 °C Package Dimensions 10.54 mm x 15.24 mm x 4.69 mm Pinout: Applications: High-current DC–DC converters. Automotive power management and motor drives. Synchronous rectification in switch-mode power supplies. Industrial motor control and power inverters. Uninterruptible power supply (UPS) systems. Package Contents: 1x IRF1404 N-Channel Power MOSFET Transistor 40V 202A TO-220. Datasheet: IRF1404 MOSFET.

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