STW4N150 N-channel 1500V, 5Ω, 4A, PowerMESH™ Power MOSFET
EGP 100
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Description Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest R DS(on) per area, unrivalled gate charge and switching characteristics. All Features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Specifications Attribute Value Category Triode/MOS Tube/Transistor/MOSFETs Datasheet STMicroelectronics STW4N150 RoHS Drain Source Voltage (Vdss) 1.5kV Continuous Drain Current (Id) 4A Drain Source On Resistance (RDS(on)@Vgs,Id) 7Ω@10V,2A Power Dissipation (Pd) 160W Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA Type N Channel Input Capacitance (Ciss@Vds) 1300pF@25V Total Gate Charge (Qg@Vgs) 50nC@10V STW4N150 Datasheet
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