IRF640 N-Channel Power MOSFET 200V ,18A ,125W
EGP 20
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IRF640 N-Channel Power MOSFET 200V ,18A ,125W Specifications: Attribute Value Channel Type N Maximum Continuous Drain Current 18 A Maximum Drain Source Voltage 200 V Package Type TO-220AB Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 150 m? Channel Mode Enhancement Maximum Gate Threshold Voltage 4V Minimum Gate Threshold Voltage 2V Maximum Power Dissipation 150 W Transistor Configuration Single Maximum Gate Source Voltage -20 V, +20 V Maximum Operating Temperature +175 ?C Number of Elements per Chip 1 Typical Gate Charge @ Vgs 67 nC @ 10 V Transistor Material Si Series HEXFET Height 8.77mm Minimum Operating Temperature -55 ?C Package Includes: 1x IRF640 MOSFET Datasheet: IRF640 Datasheet Related Products: Transistors
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