5N120BND N-Channel IGBT Transistor 1200V 21A TO-220

Description

5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 The 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220 is a robust, high-voltage power switching device designed for efficiency and reliability. With a collector-to-emitter voltage rating of 1200V and a continuous collector current of 21A, this IGBT leverages non-punch through (NPT) technology, making it well-suited for moderate frequency applications such as AC and DC motor controls, power supplies, and driver circuits for solenoids, relays, and contactors. Features 21A, 1200V rating at T C = 25°C. 1200V switching SOA capability. Typical fall time of 175ns at T J = 150°C. Low conduction losses. Integrated anti-parallel hyperfast diode. Specifications Parameter Value Collector-to-Emitter Voltage 1200V Continuous Collector Current 21A at T C =25°C Pulsed Collector Current 40A Gate-to-Emitter Voltage ±20V Power Dissipation 167W at T C =25°C Operating Temperature Range -55°C to 150°C Package Type TO-220AB Collector-Emitter Saturation Voltage 2.7V max at I C =5A, V GE =15V Diode Forward Voltage 3.50V max at I EC =10A Diode Reverse Recovery Time 65ns max at I EC =7A, dI EC /dt=200A/μs Applications AC motor controls. DC motor controls. Power supplies. Drivers for solenoids. Drivers for relays. Drivers for contactors. Package Contents 1x 5N120BND N-Channel IGBT Transistor 1200V 21A TO-220. Documents 5N120BND N-Channel IGBT Transistor.

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