IRF540 N-Channel Power MOSFET 100V 33A TO-220
EGP 15
See other suppliers →Description
IRF540 N-Channel Power MOSFET 100V 33A TO-220 The IRF540 N-Channel Power MOSFET TO-220 (100V-0.044Ω-33A) is an advanced enhancement-mode silicon-gate power field-effect transistor designed for high-efficiency power switching and amplification applications. this device combines low on-state resistance with fast switching speeds to minimize power losses and heat generation in demanding circuits. Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Specifications: Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 100V Continuous Drain Current (Id) 33A Drain-Source Resistance (Rds On) 44mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 71 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 130W Dimension: Foot Print: Application: DC-DC converters for efficient power regulation in electronics. Motor control systems in robotics and automotive applications. Switching power supplies for high-current loads. Battery management and charging circuits in portable devices. Inverters and amplifiers in audio and renewable energy systems. Package Include: 1x IRF540 N-Channel Power MOSFET 100V 33A TO-220. Datasheet: IRF540 MOSFET.
From the supplier's page.
makhzan doesn't sell — every offer opens the supplier's own site.