2SK1160 N-Channel MOSFET Transistor TO-220F (500V, 8A)
EGP 35
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Specifications: Type Designator: 2SK1160 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pd – Maximum Power Dissipation: 60 W |Vds| – Maximum Drain-Source Voltage: 500 V |Vgs| – Maximum Gate-Source Voltage: 30 V |Vgs(off) | – Minimum Gate-to-Source Cutoff Voltage: 2 V |Id| – Maximum Drain Current: 8 A Tj – Maximum Junction Temperature: 150 °C tr – Rise Time: 55 nS Coss – Output Capacitance: 340 pF Rds – Maximum Drain-Source On-State Resistance: 0.8 Ohm Package: TO-220F 2SK1160 Datasheet
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