FF200R12KE3_B2 1.05kW 295A 1200V IGBT Transistor Module

Description

FF200R12KE3_B2 1.05kW 295A 1200V IGBT Transistor Module The FF200R12KE3B2 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies, engineered to meet the demands of high-power industrial applications. This dual IGBT module is designed with a collector-emitter voltage rating of 1200V and a continuous DC collector current of 295A at a case temperature of 25°C (200A at 80°C), making it capable of handling significant power loads. The module’s total power dissipation is rated at 1050W, ensuring stable operation under high-load conditions. Features: High collector-emitter voltage rating of 1200V. Continuous collector current of 295A. Isolated baseplate for enhanced electrical insulation. Fast switching capability for reduced switching losses. Integrated freewheeling diode for efficient operation. Optimized thermal performance for high-power environments. Compact, industry-standard housing for easy integration. Low conduction and switching losses. Suitable for use in harsh and high-demand environments. Specifications: Parameter Value Collector-Emitter Voltage 1200V Collector Current (Ic) 295A Power Rating 1.05kW Collector-Emitter Saturation Voltage (Vce(sat)) 2.15 V Gate-Emitter Voltage (Vge) ±20V Operating Temperature Range -40°C to 150°C Package Type IGBT Module Manufacturer Infineon Applications: Industrial motor drives. Power inverters. Renewable energy systems such as solar and wind converters. Uninterruptible power supplies (UPS). Welding equipment. Traction and railway converters. Power control units in HVAC systems. Package Include: 1x FF200R12KE3B2 1.05kW 295A 1200V IGBT Transistor Module Data Sheet: FF200R12KE3

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