
2SC2625 NPN BJT Transistor 450V 10A TO-3P
EGP 45
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2SC2625 is an NPN bipolar junction transistor The 2SC2625 is an NPN bipolar junction transistor designed for high-voltage and high-speed switching applications. It features a triple diffused planar structure, providing high reliability and performance. This transistor is ideal for use in switching regulators, ultrasonic generators, high-frequency inverters, and general-purpose power amplifiers. Features : High voltage capability High-speed switching High reliability Triple diffused planar technology TO-3P package Specifications : Parameter Value Type NPN Package TO-3P Collector-Base Voltage (V CBO ) 450V Collector-Emitter Voltage (V CEO ) 400V Emitter-Base Voltage (V EBO ) 7V Collector Current (I C ) 10A Base Current (I B ) 3A Collector Power Dissipation (P C ) 80W @ T C =25°C Junction Temperature (T J ) 150°C Storage Temperature (T stg ) -55°C to 150°C DC Current Gain (h FE ) 10 (min) at I C =4A, V CE =5V Collector-Emitter Saturation Voltage (V CE(sat) ) 1.2V (max) at I C =4A, I B =0.8A Base-Emitter Saturation Voltage (V BE(sat) ) 1.5V (max) at I C =4A, I B =0.8A Switching Times t on = 1.0μs, t stg = 2.0μs, t f = 1.0μs (typical) Applications: Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers DataSheet : 2SC2625 NPN BJT Transistor DataSheet
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