
2SD400 NPN Transistor 25V 1A
EGP 4
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2SD400 NPN Transistor 25V 1A The 2SD400 NPN Transistor 25V 1A is a versatile bipolar junction transistor (BJT) designed for general‑purpose electronic applications where reliable switching and amplification are required. This through‑hole silicon NPN transistor is manufactured in a TO‑92 package and supports up to 1 A of continuous collector current with a maximum collector‑emitter breakdown voltage of 25 V, making it suitable for low‑voltage circuits. Features: NPN bipolar junction transistor designed for general‑purpose and medium‑power applications. Supports collector current up to 1 A. Maximum collector‑emitter voltage of 25 V. TO‑92 plastic through‑hole package for easy PCB mounting. Suitable for low‑frequency amplifiers, switching circuits, and RF usage below rated frequency limits. Wide range of DC current gain for flexibility across circuit needs. Specifications: Parameter Value Transistor Type NPN Collector-Base Voltage (V_CBO) 25V Collector-Emitter Voltage (V_CEO) 25V Emitter-Base Voltage (V_EBO) 5V Collector Current (I_C) 1A Collector Power Dissipation (P_C) 0.9W Transition Frequency (f_T) 180MHz DC Current Gain (h_FE) 60-560 Collector-Emitter Saturation Voltage (V_CE(sat)) 0.3V Base-Emitter Saturation Voltage (V_BE(sat)) 1.2V Junction Temperature (T_J) 150°C Storage Temperature (T_stg) -55 to 150°C Package TO-92 Pin Configuration: Applications: Low-frequency power amplification in audio circuits. Electronic governor systems for speed control in motors. Switching applications for loads up to 1A, such as relays or LEDs. General-purpose audio amplifiers. RF circuits operating under 180MHz. DIY electronics projects and prototyping. Package Include: 1x 2SD400 NPN Transistor 25V 1A. Datasheet: 2SD400
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