IRF150
IRF150 – 100V N-Channel Hi-Rel MOSFET
EGP 20
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IRF150 HEXFET TRANSISTOR Type Designator: IRF150 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Drain Current |Id|: 38 A Maximum Junction Temperature (Tj): 150 °C Drain-Source Capacitance (Cd): 3700 pF Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm
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