
BZX55C39 Zener Diode 39V 0.5W
EGP 0.50
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BZX55C39 Zener Diode 39V 0.5W The BZX55C39 is a silicon planar Zener diode designed to provide a controlled breakdown voltage in reverse-bias operation. According to the supplied Semtech BZX55C datasheet, the BZX55C39 has a nominal Zener voltage of 39V, with a specified Zener voltage range of 37V to 41V at a Zener test current of 2.5mA. The device has a maximum power dissipation of 500mW at an ambient temperature of 25°C and is available in an axial glass DO-35 package. The diode body includes a cathode band for polarity identification. It is suitable for voltage regulation, reference circuits, voltage clamping, and protection applications. Features: Silicon planar Zener diode. Axial through-hole construction. Glass package. Cathode identification band. Suitable for voltage regulation. Suitable for voltage clamping and protection. E24-standard Zener voltage series. Compact package for PCB mounting. Specifications: Specification Value Part Number BZX55C39 Diode Type Zener Diode Nominal Zener Voltage 39V Zener Voltage Range 37–41V Zener Test Current, IZT 2.5mA Dynamic Resistance, ZZT 90Ω max. Dynamic Resistance, ZZK 500Ω max. Reverse Leakage Current at 25°C 0.1µA max. Reverse Leakage Current at 125°C 5µA max. Reverse Leakage Test Voltage 30V Temperature Coefficient 0.04–0.12%/K Power Dissipation 500mW Forward Voltage at IF = 100mA 1V max. Junction Temperature 175°C max. Storage Temperature -55 to +175°C Package DO-35 Mounting Type Through-Hole Technology Silicon Planar Applications: 39V voltage regulation. Voltage reference circuits. Overvoltage protection. Voltage clamping. Power supply protection. Signal protection. Transient voltage limiting. General-purpose electronic circuits. Packages Included: 1 × BZX55C39 Zener Diode 39V 0.5W. Documents: BZX55C39 Datasheet.
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