BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92
EGP 6
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BS170 N-Channel MOSFET, 500mA, 60V, 3-Pin TO-92 The BS170 is a N-channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 500mA DC. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications. Voltage controlled small signal switch Rugged and reliable High saturation current capability Specifications: Attribute Value Channel Type N Maximum Continuous Drain Current 500 mA Maximum Drain Source Voltage 60 V Package Type TO-92 Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 5 ? Channel Mode Enhancement Maximum Gate Threshold Voltage 3V Minimum Gate Threshold Voltage 0.8V Maximum Power Dissipation 830 mW Transistor Configuration Single Maximum Gate Source Voltage -20 V, +20 V Number of Elements per Chip 1 Width 4.19mm Transistor Material Si Length 5.2mm Maximum Operating Temperature +150 ?C Height 5.33mm Minimum Operating Temperature -55 ?C Package Includes: 1x BS170 N-Channel MOSFET Datasheet: BS170 Datasheet Related Products: Transistors
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