BC557 BJT PNP Epitaxial Silicon Transistor -50V -100 TO-92

Description

BC557 BJT PNP Epitaxial Silicon Transistor -50V -100 TO-92 The BC557 is a PNP epitaxial silicon bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Its compact TO-92 package and reliable electrical characteristics make it a popular choice for electronic circuits requiring low-current signal processing, load switching, and analog amplification. The device is widely used in consumer electronics, educational projects, and industrial control systems. Featuring good current gain, low noise performance, and stable operation, the BC557 is suitable for audio preamplifiers, sensor conditioning circuits, driver stages, and logic interfacing. As the complementary counterpart to the BC547 NPN transistor family, it is frequently paired with NPN transistors in push-pull amplifier stages and switching circuits. Features: General-purpose PNP transistor. Suitable for switching applications. Suitable for signal amplification. Low-noise operation. High current gain. Compact through-hole package. Reliable and stable performance. Easy integration into electronic circuits. Ideal for analog and digital applications. Compatible with breadboard prototyping. Suitable for educational and hobby projects. Specifications: Symbol Parameter Conditions Min. Typ. Max. Unit ICBO ​ Collector Cut-Off Current VCB=−30 V, IE=0 V CB ​ = − 30 V , I E ​ = 0 nA hFE ​ DC Current Gain VCE=−5 V, IC=−2 mA V CE ​ = − 5 V , I C ​ = − 2 mA 110 800 VCE(sat) ​ Collector-Emitter Saturation Voltage IC=−10 mA, IB=−0.5 mA I C ​ = − 10 mA , I B ​ = − 0.5 mA -90 -300 mV IC=−100 mA, IB=−5 mA I C ​ = − 100 mA , I B ​ = − 5 mA -650 mV VBE(sat) ​ Collector-Base Saturation Voltage IC=−10 mA, IB=−0.5 mA I C ​ = − 10 mA , I B ​ = − 0.5 mA mV IC=−100 mA, IB=−5 mA I C ​ = − 100 mA , I B ​ = − 5 mA mV VBE(on) ​ Base-Emitter On Voltage VCE=−5 V, IC=−2 mA V CE ​ = − 5 V , I C ​ = − 2 mA -600 -660 -750 mV VCE=−5 V, IC=−10 mA V CE ​ = − 5 V , I C ​ = − 10 mA mV fT ​ Current Gain Bandwidth Product VCE=−5 V, IC=−10 mA, f=10 MHz V CE ​ = − 5 V , I C ​ = − 10 mA , f = 10 MHz MHz Cob ​ Output Capacitance VCB=−10 V, IE=0, f=1 MHz V CB ​ = − 10 V , I E ​ = 0 , f = 1 MHz pF NF Noise Figure VCE=−5 V, IC=−200 μA, f=1 kHz, RG=2 kΩ V CE ​ = − 5 V , I C ​ = − 200 μ A , f = 1 kHz , R G ​ = 2 k Ω 2 10 dB VCE=−5 V, IC=−200 μA, RG=2 kΩ, f=30 to 15000 MHz V CE ​ = − 5 V , I C ​ = − 200 μ A , R G ​ = 2 k Ω , f = 30 to 15000 MHz 1.2 4.0 dB VCE=−5 V, IC=−200 μA, RG=2 kΩ, f=30 to 15000 MHz V CE ​ = − 5 V , I C ​ = − 200 μ A , R G ​ = 2 k Ω , f = 30 to 15000 MHz 1.2 2.0 dB Pin Configuration: Pin Number Pin Name Description 1 Collector Current flows in through collector 2 Base Controls the biasing of transistor 3 Emitter Current Drains out through emitter Applications: Signal amplification circuits. Audio preamplifiers. Low-current switching circuits. Sensor interface circuits. Microcontroller interfacing. Relay driver circuits. LED switching applications. Push-pull amplifier stages. Educational electronics projects. Consumer electronic devices. Voltage level shifting circuits. Analog signal conditioning. Package Includes: 1x BC557 BJT PNP Epitaxial Silicon Transistor -50V -100 TO-92 Documents: BC557 Transistor Datasheet.

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