BD709
BD709 NPN Transistor TO-220 (80V, 12A)
EGP 20
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Specifications: Type Designator: BD709 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation Tc ≤ 25°C : 75 W Maximum Collector-Base Voltage |Vcb|: 80 V Maximum Collector-Emitter Voltage |Vce|: 80 V Maximum Emitter-Base Voltage |Veb|: 5 V Collector Current |Ic|: 12 A Maximum Collector Current |Ic max|: 18 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 3 MHz BD708 Datasheet
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