2SK538 N-Channel MOSFET Transistor 900V 3A 100W TO-3P
EGP 25
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2sK538 N-Channel MOSFET Transistor Type Designator: 2SK538 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 100 W Maximum Drain-Source Voltage |Vds|: 900 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Drain Current |Id|: 3 A Maximum Junction Temperature (Tj): 150 °C Maximum Drain-Source On-State Resistance (Rds): 4.5 Ohm 2SK538 Datasheet
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