BUZ20 ST N Channel Power MOSFET Transistor TO-220

Description

BUZ20 ST N Channel Power MOSFET Transistor TO-220 The BUZ20 ST N Channel Power MOSFET Transistor TO-220 is a robust and efficient enhancement-mode MOSFET designed for high-speed switching and power control applications. Built using silicon gate technology, this device offers excellent performance with low on-resistance and high current handling capability. Features: N-Channel enhancement mode for positive gate drive control. Avalanche-rated for enhanced ruggedness in switching applications. Very fast switching speeds for high-efficiency operation. Low drain-source on-resistance of 0.2Ω. High input impedance for easy direct drive from integrated circuits. Specifications: Parameter Value Model Number BUZ20 Component Description N-Channel Power MOSFET Transistor Package Type TO-220AB Drain-Source Voltage (VDS) 100V Continuous Drain Current (ID) 13.5A (at TC=28°C) Pulsed Drain Current (IDpuls) 54A (at TC=25°C) Gate-Source Voltage (VGS) ±20V Drain-Source On-Resistance (RDS(on)) 0.2Ω max (at VGS=10V, ID=8.5A) Power Dissipation (Ptot) 75W (at TC=25°C) Operating Junction Temperature (TJ) -55°C to +150°C Input Capacitance (Ciss) 400pF typ. Output Capacitance (Coss) 120pF typ. Reverse Transfer Capacitance (Crss) 70pF typ. Turn-On Delay Time (td(on)) 10ns typ. Rise Time (tr) 45ns typ. Turn-Off Delay Time (td(off)) 55ns typ. Fall Time (tf) 40ns typ. Thermal Resistance, Junction-to-Case (RthJC) ≤1.67K/W Pin Configuration: Applications: DC-DC converters and switching power supplies. Motor control and drive circuits. Automotive and industrial power switching. Battery chargers and inverters. Solenoid and relay drivers. High-efficiency power management systems. Audio amplifier output stages. Package Include: 1x BUZ20 ST N Channel Power MOSFET Transistor TO-220. Datasheet: BUZ20

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