S9015
S9015 PNP Small Signal Transistor
EGP 0.75
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S9015 Key Features High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity Specifications Attribute Value Category Transistors/Bipolar Transistors – BJT Datasheet Jiangsu Changjing Electronics Technology Co., Ltd. S9015 RoHS Collector Cut-Off Current (Icbo) 50nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 450mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 300@1mA,5V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@100mA,10mA Transistor Type PNP Operating Temperature +150℃@(Tj) Application General Purpose Switching and Amplification
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