G40T120FDL5 IGPT Transistor 1200V 40A TO-247
EGP 85
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G40T120FDL5 IGPT Transistor 1200V 40A TO-247 The G40-T120FDL5 IGBT Transistor in TO-247 package is a high-efficiency power semiconductor device engineered for demanding switching applications. This Insulated Gate Bipolar Transistor (IGBT) combines the high input impedance and fast switching characteristics of a MOSFET with the low conduction losses of a bipolar transistor, making it ideal for modern power electronics systems. Feature: High collector-emitter voltage rating up to 1200V. Low saturation voltage for reduced conduction losses. Fast switching performance with low switching losses. Advanced trench and field-stop IGBT technology. High current handling capability up to 40A. Specifications: Parameter Value Model G40T120FDL5 Package TO-247 Collector-Emitter Voltage 1200V Gate-Emitter Voltage ±20V Collector Current (T_C=100°C) 40A Collector Current (T_C=25°C) 80A Pulsed Collector Current 160A Power Dissipation (T_C=25°C) 428W V_CE(sat) (typ @ 40A) 1.65V Operating Junction Temperature -40°C to +175°C Dimension: Foot Print: Applications: Uninterruptible power supplies (UPS). Welding converters and machines. High-frequency DC-DC and AC-DC converters. Industrial motor drives and inverters. Solar and renewable energy inverters. Induction heating equipment. Power factor correction circuits. Professional power electronics and automation systems. Package Include: 1x G40-T120FDL5 IGPT Transistor TO-247 Datasheet: G40T120FDL5
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