K817 N-Channel MOSFET Transistor 60V 26A TO-220F

Description

K817 N-Channel MOSFET Transistor 60V 26A TO-220F The K817 is a high-power N-channel MOSFET designed for efficient switching in electronic and power-control circuits. It is built to handle up to 60V drain-source voltage and 26A continuous drain current, making it suitable for demanding load-control tasks. With a low on-resistance of up to 55mΩ at VGS = 10V, the device helps reduce power loss and heat generation during operation. The datasheet also shows a high single-pulse drain current rating of 104A, which supports short burst loads and switching events. The K817 is intended for motor drive, DC-DC converter, power switch, and solenoid drive applications. It also includes 100% avalanche testing and stable device-to-device performance, which helps improve reliability in real-world circuits. Features: N-Channel MOSFET transistor. 60V drain-source voltage rating. 26A continuous drain current. 104A single pulse drain current capability. Low RDS(on) for efficient switching. 100% avalanche tested. Suitable for robust and reliable operation. Specifications: Parameter Value Product Name: K817 N-Channel MOSFET Transistor Drain-Source Voltage (VDSS): 60V Gate-Source Voltage (VGS): ±20V Continuous Drain Current (ID): 26A Single Pulse Drain Current (IDM): 104A Total Dissipation (PD): 35W Maximum Junction Temperature (TJ): -55°C to 150°C Storage Temperature (Tstg): -55°C to 150°C Thermal Resistance, Junction to Case (Rth j-c): 3.57°C/W Drain-Source Breakdown Voltage: 60V Gate Threshold Voltage: 1.0V to 2.5V Drain-Source On-Resistance: 55mΩ max Gate-Body Leakage Current: ±0.1µA max Zero Gate Voltage Drain Current: 10µA max Forward On-Voltage: 1.7V max Applications: Motor drive. DC-DC converter. Power switch. Solenoid drive. Package Contents: 1x K817 N-Channel MOSFET Transistor 60V 26A TO-220F Datasheet

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