LMUN2132LT1G 15@5.0mA,10V 246mW 100mA 50V SOT-23 Digital Transistors SMD

Description

LMUN2132LT1G 15@5.0mA,10V 246mW 100mA 50V SOT-23 Digital Transistors SMD he LMUN2132LT1G, manufactured by Leshan Radio Company, is a PNP digital transistor with integrated bias resistors R1 and R2, both nominally 4.7 kΩ, housed in a compact SOT-23 surface-mount package. This Bias Resistor Transistor combines a single PNP transistor with a monolithic bias resistor network, eliminating the need for external resistors in circuit designs. It is optimized for low-power applications, offering simplified circuit design, reduced board space, and fewer components. The device is suitable for switching applications in various electronic systems, with a maximum collector-emitter voltage of 50V and a collector current of up to 100mA. Features: Integrated bias resistors: R1 = 4.7 kΩ, R2 = 4.7 kΩ. PNP silicon transistor. SOT-23 surface-mount package. Simplifies circuit design by reducing external components. Minimizes board space. Modified gull-winged leads for thermal stress absorption. Pinout: Specifications: Package SOT-23 Operating Temperature -55℃~+150℃ DC Current Gain 15@5.0mA,10V Output Voltage(VO(on)) 200mV Input Resistor 6.1kΩ Resistor Ratio – type – Pd – Power Dissipation 246mW Current – Collector(Ic) 100mA Collector – Emitter Voltage VCEO 50V Applications: Interface/driving of digital logic signals to loads. General-purpose switching in microcontroller I/O, signal level shifting. High-side switching or sourcing currents in battery-powered and embedded systems. Lamp/indicator drivers, sensor or bus interface circuits. Industrial or automotive controls. Data Sheet: LMUN2132LT1G

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