
2SC945 NPN TO-92 Bipolar Transistors – BJT
EGP 1
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2SC945 NPN TO-92 Bipolar Transistors – BJT 2SC945 NPN TO-92 Bipolar Transistors – BJT is a classic silicon NPN bipolar junction transistor provided in a compact TO-92 through-hole package and engineered to serve as a reliable active element in low-power electronic circuits. This transistor has long been used in both analog and switching applications where a moderate voltage capability and good linearity are required. The device exhibits a collector-emitter breakdown voltage (VCEO) of approximately 50 V, making it suitable for low to moderate voltage operations, and can handle a continuous collector current of up to about 150 mA, which accommodates many small-signal amplifier stages and light switching tasks. Features: High DC current gain (hFE) linearity with classifications from 90 to 600. Low noise figure for clean audio amplification. High transition frequency (fT) up to 190MHz typical. Low collector-emitter saturation voltage for efficient switching. Pinout Configuration: Pin Number Pin Name Description 1 Emitter Current Drains out through emitter, normally connected to ground 2 Collector Current flows in through collector, normally connected to load 3 Base Controls the biasing of transistor, Used to turn ON or OFF the transistor Applications: Low current switches Pre-amplifiers H-bridge circuits for low power motors Audio frequency amplifier circuits Oscillator circuits Package Include: 1x 2SC945 NPN TO-92 Bipolar Transistors – BJT Datasheet: C945 Transistor
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