2SC1815 NPN TO-92 Bipolar Transistors – BJT

Description

2SC1815 NPN TO-92 Bipolar Transistors – BJT The 2SC1815 is a silicon NPN epitaxial‑planar transistor in a TO‑92 package, designed primarily for general‑purpose amplifier and low‑power switching applications. Features Epitaxial‑planar process for consistent performance Low saturation voltage (V CE(sat) ≈ 0.25 V @ I C =100 mA) High transition frequency (f T up to 80 MHz) Standard TO‑92 package for easy through‑hole mounting Wide temperature range: –55 °C to +125 °C Specifications Absolute Maximum Ratings (T A = 25 °C) Parameter Symbol Value Unit Collector–Base Voltage V CBO 60 V Collector–Emitter Voltage V CEO 50 V Emitter–Base Voltage V EBO 5.0 V Continuous Collector Current I C 150 mA Power Dissipation P D 400 mW Junction & Storage Temperature T J , T stg –55 to +125 °C Thermal Resistance (J–A) Θ JA 250 °C/W Key Electrical Characteristics (T A = 25 °C) Parameter Test Condition Min Typ/Max Unit Leakage Current, I CBO V CB = 60 V 100 nA Leakage Current, I CEO V CE = 50 V 100 nA V CE(sat) I C =100 mA, I B =10 mA 0.25 V DC Current Gain, h FE V CE =6 V, I C =2 mA 70 700 Transition Frequency, f T V CE =10 V, I C =1 mA, f=30 MHz 80 MHz Base–Emitter On‑Voltage, V BE(on) I C =310 mA 1.45 V Applications General‑purpose audio and RF amplification Low‑power switching circuits Pre‑amplifier stages in signal processing Oscillator and driver stages in consumer electronics DataSheet 2SC1815

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