BD649 NPN Bipolar Transistors – BJT (100V 8A 62.5W) TO-220
EGP 15
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BD649 NPN Power Transistor : High-Current, High-Gain Performance for Audio and Power Applications Specifications: Type Designator: BD649 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 62.5 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 8 A Max. Operating Junction Temperature (Tj): 150 °C Forward Current Transfer Ratio (hFE), MIN: 750 Package: TO-220 Applications: Audio Amplifiers: Used in high-power audio amplifier circuits for efficient signal amplification. Switching Regulators: Employed in power supply circuits for efficient switching operations. Motor Drivers: Utilized in controlling motors in various industrial and consumer applications. Complementary Push-Pull Circuits: Ideal for use in complementary push-pull amplifier configurations. BD649 Datasheet
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