SEMIKRON SKKT 105/16E Thyristor Module 1.6KV 115A

Description

SEMIKRON SKKT 105/16E Thyristor Module 1.6KV 115A The SEMIKRON SKKT 105/16E is part of the SKKT 105 series of dual thyristor modules housed in the industry-standard SEMIPACK 1 package. Each module integrates two silicon-controlled rectifiers (SCRs) on a common isolated metal baseplate, using aluminium-oxide (Al₂O₃) ceramic insulation to achieve high thermal conductivity and electrical isolation. Hard-soldered joints between the semiconductor chips and substrates ensure excellent mechanical robustness and long-term reliability under thermal cycling. Rated for a repetitive peak reverse (V_RRM) and forward blocking voltage (V_DRM) of 1 600 V, the SKKT 105/16E supports an average on-state current (I_TAV) of 115 A at a case temperature of 80 °C. Internally, the two thyristors share a common anode–cathode connection but have separate gate and cathode terminals for independent control. The top-mounted power terminals (marked 1–3) facilitate low-inductance connections, while the gate pins (K1, G1, K2, G2) allow isolated triggering. The module’s package is UL-recognized (file E 63 532) and designed for screw-mounting to heatsinks; typical mounting torque values are 5 Nm to the heatsink and 3 Nm to the terminals. Operating junction temperatures range from 40 °C up to 130 °C, making it suitable for rigorous industrial environments. Features: Heat transfer through aluminium-oxide ceramic isolated metal baseplate. Hard-soldered joints for high mechanical and thermal cycling reliability. Specifications: Parameter Value Conditions / Notes Average on-state current, ITAV: 115 A Tcase = 80 °C Repetitive peak reverse/forward blocking voltage, VRRM/VDRM: 1 600 V – Surge on-state current, ITSM: 1 900 A Tvj = 130 °C 10 ms I²t (surge rating): 18 000 A²·s Tvj = 130 °C 8.3…10 ms Gate turn-on delay time, tgd: 1 µs IG = 1 A dIG/dt = 1 A/µs Gate turn-on rise time, tgr: 2 µs Same as above Maximum rate of rise of on-state current, (dIT/dt)cr: 150 A/µs Tvj = 130 °C Turn-off time, tq: 100 µs Tvj = 25 °C RG = 33 Ω Holding current, IH: 150 mA Tvj = 130 °C Latching current, IL: 300 mA Tvj = 25 °C On-state threshold voltage, VT(TO): 0.9 V, max 1.65 V IT = 300 A On-state slope resistance, rT: 2.0 mΩ (max) Tvj = 130 °C Off-state leakage current, ID/IR: 20 mA (max) Tvj = 130 °C VDD = VDRM Gate trigger voltage, VGT: 3 V (min) Tvj = 25 °C (d.c.) Gate trigger current, IGT: 150 mA (min) Tvj = 25 °C (d.c.) Gate non-trigger voltage, VGD: 0.25 V Tvj = 130 °C (d.c.) Gate non-trigger current, IGD: 6 mA Tvj = 130 °C (d.c.) Thermal resistance, Rth(j-c): 0.30 °C/W per thyristor / 0.15 °C/W per module Tvj = 130 °C Thermal resistance, Rth(c-h): 0.20 °C/W per thyristor / 0.10 °C/W per module – Junction temperature, Tvj: –40 °C … +130 °C – Storage temperature, Tstg: –40 °C … +125 °C – Isolation voltage (Visol): 3 600 V AC (r.m.s. 1 s/1 min) to heatsink; 3 000 V (r.m.s. 1 s/1 min) to terminals – Mounting torque to heatsink (M1): 5 Nm (+15 %) – Mounting torque to terminals (M2): 3 Nm (+15 %) – Module weight: 95 g – Dimensions of thyristor modules SKKT 105/16E: Applications: DC motor control. AC motor soft starters. Temperature control. Professional light dimming. Package Contents: 1x SEMIKRON SKKT 105/16E Thyristor Module 1.6KV 115A SEMIKRON SKKT 105/16E Documents: Datasheet

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