IRFP450
IRFP450 N-Channel MOSFET Transistor
EGP 115
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IRFP450 N-Channel MOSFET Transistor Type Designator: IRFP450 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 190 W Maximum Drain-Source Voltage |Vds|: 500 V Maximum Gate-Source Voltage |Vgs|: 30 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 14 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 75 nC Rise Time (tr): 23 nS Drain-Source Capacitance (Cd): 300 pF Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm Package: TO247 IRFP450 Transistor Equivalent Substitute – MOSFET Cross-Reference Search
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