50N06 N-Channel MOSFET Transistor 60V 50A
EGP 20
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50N06 N-Channel MOSFET Transistor 60V 50A The 50N06 N-Channel MOSFET Transistor is a high-performance semiconductor device engineered for applications requiring robust current and voltage handling. With a maximum drain-source voltage of 60V and a continuous drain current of 50A, this MOSFET is ideally suited for demanding applications such as automotive systems, DC/DC converters, and power management circuits in portable and battery-operated devices. Features: High current capability (50A). Low on-resistance for minimal power loss. High efficiency for switching applications. Reliable performance in power regulation circuits. Suitable for both high- and low-side switching. Specifications: TYPE DESCRIPTION Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current – Continuous Drain (Id) @ 25°C 50A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V RDS(on) 0.022Ω @ VGS = 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1540 pF @ 25 V FET Feature – Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Base Product Number FQP50 Pin Configuration: Application: Automotive systems. DC/DC converters. High-efficiency switching for power management in portable and battery-operated products. Package Include: 1x 50N06 N-Channel MOSFET Transistor 60V 50A. Data Sheet: FQP50N06
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