2SK1358 N-Channel MOSFET Transistor 900V 9A TO-3PI

Description

2SK1358 N-Channel MOSFET Transistor 900V 9A TO-3PI The 2SK1358 is a high-voltage N-channel power MOSFET designed for demanding switching applications. Built in a TO-3PI package for robust thermal performance, it is specified for a minimum drain-source breakdown of 900 V and continuous drain current capability up to 9 A at case temperature. The device targets fast switching topologies where high voltage blocking and low gate charge are important tradeoffs. Internally optimized for rapid transitions, the 2SK1358 exhibits rise/fall times measured in the tens of nanoseconds and reasonably low on-resistance when driven at VGS = 10 V, making it suitable for half-bridge and hard-switch designs. Its intrinsic diode supports recovery at high currents, and rated thermal limits (150 °C junction) plus a low junction-to-case thermal resistance facilitate power dissipation in properly heatsunk assemblies. The datasheet presents the 2SK1358 as a rugged, fast-switching MOSFET for high-voltage power conversion: offline converters, induction heaters, and industrial switchgear where 900 V blocking and multi-ampere switching are required. Electrical parameters such as threshold voltage, RDS(on) at given gate drive, dynamic switching times, and diode forward voltage allow designers to balance conduction losses against switching losses for efficient designs. Features: Drain-source breakdown voltage VDSS = 900 V minimum. Continuous drain current ID = 9 A (TC = 25 °C). Fast switching with rise/fall times in the nanosecond range. Low RDS(on) at VGS = 10 V for reduced conduction loss. Built-in intrinsic diode rated for high current pulses. Maximum junction temperature Tj = 150 °C. Low junction-to-case thermal resistance for effective heat transfer. Gate-source voltage rating ±30 V. Specifications: Parameter: Value: Drain-Source Voltage (VDSS): 900 V Gate-Source Voltage (VGS): ±30 V Continuous Drain Current (ID @ TC=25°C): 9 A Total Dissipation (Ptot @ TC=25°C): 150 W Maximum Junction Temperature (Tj): 150 °C Storage Temperature Range (Tstg): −55 to +150 °C Rth(j-c) Junction-to-Case Thermal Resistance: 0.833 °C/W Rth(j-a) Junction-to-Ambient Thermal Resistance: 50 °C/W V(BR)DSS (Breakdown @ ID=10 mA): 900 V (min) VGS(th) Gate Threshold (ID=1 mA): 1.5 – 3.5 V RDS(on) (VGS=10 V, ID=4 A): 1.1 – 1.4 Ω Diode Forward Voltage (IF=9 A): ~2.0 V Switching times (max): tr ≈ 25–50 ns; ton ≈ 40–80 ns tf ≈ 20–40 ns; toff ≈ 100–200 ns Pinout: Applications: High-voltage switching power supplies. Industrial motor drives and induction heating. Offline converters and power factor correction stages. Half-bridge and full-bridge switch modules. Package Contents: 1x 2SK1358 N-Channel MOSFET Transistor 900V 9A TO-3PI Datasheet

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