2SK2324 N-Channel MOSFET 600V 2A TO-220

Description

2SK2324 N-Channel MOSFET 600V 2A TO-220 The 2SK2324 is a silicon N-channel power F-MOS FET designed for high-voltage switching applications that require fast switching, low on-resistance, and rugged avalanche performance. It is rated for 600V drain-source breakdown voltage, 2A continuous drain current, and 40W allowable power dissipation at case temperature, making it suitable for motor drive, solenoid drive, control equipment, non-contact relay, and switching-mode regulator circuits. The device is housed in a TO-220E package for through-hole mounting and heatsinking. Features Avalanche energy capability is guaranteed. High-speed switching for power control circuits. Low on-resistance for improved efficiency. No secondary breakdown for rugged operation. TO-220E package supports heatsink mounting. Specifications Absolute Maximum Ratings (T c = 25°C) Parameter Symbol Rating Unit Drain-Source breakdown voltage V DSS 600 V Gate-Source voltage V GSS ±30 V Drain current DC I D ±2 A Pulse I DP ±4 A Avalanche energy capability EAS * 10 mJ Allowable power dissipation T c = 25°C P D 2 W T a = 25°C 40 Channel temperature T ch 150 °C Storage temperature T stg -55 to +150 °C * L = 5mH, I L = 2A, 1 pulse Applications Non-contact relay circuits. Solenoid drive circuits. Motor drive systems. Control equipment. Switching-mode regulators. Package Contents 1x 2SK2324 N-Channel MOSFET TO-220. Documents Datasheet 2SK2324

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