2SC1506 High‑Voltage Amplifier Transistor NPN 300V 200mA TO‑66

Description

2SC1506 High‑Voltage Amplifier Transistor NPN 300V 200mA TO‑66 The 2SC1506 High‑Voltage Amplifier Transistor NPN 300 V 200 mA TO‑66 is a triple‑diffused silicon device engineered for color television chroma and sound output stages. Housed in a rugged TO‑66 package, it delivers high breakdown voltages and excellent frequency response for reliable amplification in demanding line‑powered applications. Features High collector–base and collector–emitter breakdown voltages for robust operation. Low collector–base capacitance for improved high‑frequency performance. Gain bandwidth product (f T ) up to 80 MHz at typical operating currents. Triple‑diffused construction ensures consistent gain and low noise. Wide operating junction temperature range for thermal resilience. Specifications Parameter Value Collector–Base Voltage (V CBO ) 300 V Collector–Emitter Voltage (V CEO ) 300 V Emitter–Base Voltage (V EBO ) 7.0 V Collector Current (I C ) 200 mA Power Dissipation (P Ta =25 °C) 1.2 W Power Dissipation (P Tc =25 °C) 15 W DC Current Gain (h FE ) 40–200 @ V CE =10 V, I C =10 mA Gain Bandwidth (f T ) 50–80 MHz @ V CE =30 V, I E =10 mA Collector–Base Capacitance (C ob ) 4.5 pF @ V CB =50 V, I E =0 mA Operating Junction Temperature –55 °C to +150 °C Package TO‑66 Package Dimensions Unit: mm Applications Chroma and sound output amplifiers in color television receivers. High‑voltage switching and signal amplification in line‑powered electronics. General‑purpose high‑frequency, high‑voltage amplification. Industrial instrumentation requiring robust high‑voltage transistors. Package Contents 1x 2SC1506 High‑Voltage Amplifier Transistor NPN 300 V 200 mA TO‑66. Documents NEC 2SC1506 Datasheet .

From the supplier's page.