IRFPE50 N-Channel Power MOSFET 800V 7.8A TO-247AC

Description

IRFPE50 N-Channel MOSFET Transistor The IRFPE50 is an N-channel MOSFET transistor designed for high-performance power switching applications. It is engineered to deliver high efficiency and reliability in diverse electronic circuits. With an ability to handle significant drain currents and voltage, this MOSFET is a popular choice for power control and conversion systems. The transistor features a low on-resistance (RDS(on)) for minimal power loss during operation, making it suitable for various demanding applications. Its avalanche-tested design ensures robustness against energy surges, while the MOSFET’s high drain-source voltage rating contributes to its versatility in handling a wide range of voltages. Additionally, the IRFPE50 is designed for high thermal stability, operating at a wide temperature range, and has minimal lot-to-lot variation to ensure consistent and reliable performance over time. These characteristics make it ideal for use in switching power supplies, motor control systems, and other high-voltage applications. Features: Drain current: 7.8A @ TC=25°C. Drain-source voltage: VDSS = 800V (Min). Static drain-source on-resistance: RDS(on) = 1.2Ω (Max) @ VGS = 10V. 100% avalanche tested. Minimum lot-to-lot variations for robust device performance. Specifications: Parameter Value Unit Drain-Source Voltage (VDSS): 800 V Gate-Source Voltage (VGS): ±20 V Drain Current (ID): 7.8 A Drain Current (IDM): 31 A Total Dissipation @ TC=25°C (PD): 190 W Maximum Operating Junction Temperature (Tj Max): -55 ~ 150 °C Storage Temperature (Tstg): -55 ~ 150 °C Thermal Resistance (Junction to Case) (Rth j-c): 0.65 °C/W Junction-to-Ambient (RθJA): 40 °C/W Pinout Diagram: Footprint: Applications: Switching Power Supplies Converters AC and DC Motor Controls Package includes: 1x IRFPE50 N-Channel Power MOSFET 800V 7.8A TO-247AC DataSheet IRFPE50

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