BD648 PNP Power Transistor

Description

BD648 PNP Power Transistor The BD648 is a high-performance PNP Silicon Power Darlington Transistor designed for a wide range of high-power applications. Encased in a durable TO-220 package, this transistor is engineered to handle significant current and power dissipation, making it an excellent choice for use in audio amplifiers, general-purpose amplifiers, and analogue switching circuits. Its robust design ensures reliable operation in both consumer and industrial electronics, catering to engineers and hobbyists alike. Features: PNP Silicon Power Darlington Transistor. High current gain: minimum hFE of 750 at 3V, 3A. Continuous collector current: 8A. Collector-emitter voltage: 80V. Power dissipation: 62.5W at 25°C case temperature. TO-220 package for easy mounting and heat dissipation. Complementary Pair Complementary to the NPN transistor BD647. Specifications: Parameter Value Collector-Emitter Voltage (V_CEO) 80V Collector-Base Voltage (V_CBO) 100V Emitter-Base Voltage (V_EBO) 5V Continuous Collector Current (I_C) 8A Peak Collector Current (I_CM) 12A Continuous Base Current (I_B) 0.3A Power Dissipation (P_tot) 62.5W DC Current Gain (h_FE) 750 min Transition Frequency (f_T) 1MHz Operating Temperature Range 65 to +150°C Package TO-220 Pin Configuration: Applications: Output stages in audio equipment. General-purpose amplifiers. Analogue switching applications. Motor drivers. Relay drivers. Package Include: 1x BD648 PNP Power Transistor. Data Sheet: BD648

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