Toshiba 2SK1356 N-Channel Power MOSFET 900V 3A TO-220F
EGP 30
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Toshiba 2SK1356 N-Channel Power MOSFET 900V 3A TO-220F The Toshiba 2SK1356 is a high-speed, high-voltage N-Channel power MOSFET designed for a wide range of power switching applications. This component is ideal for use in DC-DC converters, switch-mode power supplies, and motor control circuits. Its robust design ensures reliable performance with minimal lot-to-lot variations. The 2SK1356 is an enhancement-mode transistor, offering low on-resistance and fast switching speeds. Features: High Voltage Capable of handling a drain-source voltage of up to 900V. High-Speed Switching Designed for rapid switching applications to improve efficiency. Low On-Resistance Minimizes power loss and heat generation with a static drain-source on-resistance of less than 4.3Ω Enhancement Mode Features a low gate threshold voltage for easier control. Low Gate Charge Contributes to faster switching and reduced driver power requirements. Specifications: Parameter Value Transistor Type: N-Channel MOSFET Drain-Source Voltage (Vdss): 900 V Continuous Drain Current (Id): 3 A Power Dissipation (Pd): 40 W Gate-Source Voltage (Vgss): ±30 V Static Drain-Source On-Resistance (Rds(on)): < 4.3 Ω Operating Junction Temperature (Tj): 150 °C Rise Time (tr): 55 ns Drain-Source Capacitance (Cd): 120 pF Applications: Switching Power Supplies Motor Control Power Amplifiers Pulsed Power Applications Relay and Solenoid Driving Package Contents: 1x Toshiba 2SK1356 N-Channel Power MOSFET 900V 3A TO-220F Datasheet
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