Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P

Description

Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P The 60N60FD1 (SGT60N60FD1PN) from Silan Microelectronics is a 60A, 600V Field Stop IGBT with an integrated fast recovery diode (FRD) , supplied in the industry-standard TO-3P 3-pin through-hole package. Built on Silan’s Field Stop IGBT technology, this device offers optimum performance for induction heating, UPS (uninterruptible power supplies), SMPS (switched-mode power supplies) and PFC (power factor correction) applications. It combines low conduction loss and fast switching with high input impedance , and achieves a typical collector-emitter saturation voltage of just 2.2V at IC = 60A . Features 60A, 600V Field Stop IGBT (N-Channel) VCE(sat) (typ.) = 2.2V @ IC = 60A Low conduction loss Fast switching (recommended frequency 10–60 kHz) High input impedance Co-packaged fast recovery diode High current capability: 120A @ TC = 25°C, 180A pulsed Wide junction temperature range: –55°C to +175°C Specifications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Characteristic Symbol Test Condition Rating Unit Collector to Emitter Voltage V CE — 600 V Gate to Emitter Voltage V GE — ±20 V Collector Current I C TC = 25°C 120 A Collector Current I C TC = 100°C 60 A Pulsed Collector Current I CM — 180 A Maximum Power Dissipation P D TC = 25°C 321 W Operating Junction Temperature T J — -55 ~ +175 °C Storage Temperature Range T stg — -55 ~ +175 °C THERMAL CHARACTERISTICS (TO-3P) Thermal Resistance, Junction to Case (IGBT) R θJC — 0.39 °C/W Thermal Resistance, Junction to Case (FRD) R θJC — 1.10 °C/W Thermal Resistance, Junction to Ambient R θJA — 40 °C/W ELECTRICAL CHARACTERISTICS – IGBT (TC = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min. / Typ. / Max. Unit Collector to Emitter Breakdown Voltage BV CE V GE = 0V, I C = 250µA 600 / – / – V C-E Leakage Current I CES V CE = 600V, V GE = 0V – / – / 200 µA G-E Leakage Current I GES V GE = 20V, V CE = 0V – / – / ±400 nA G-E Threshold Voltage V GE(th) I C = 250µA, V CE = V GE 4.0 / 5.0 / 6.5 V Collector to Emitter Saturation Voltage V CE(sat) I C = 60A, V GE = 15V – / 2.2 / 2.7 V Collector to Emitter Saturation Voltage V CE(sat) I C = 60A, V GE = 15V, TC = 125°C – / 2.6 / – V Input Capacitance C ies V CE = 30V, V GE = 0V, f = 1MHz – / 2850 / – pF Output Capacitance C oes – / 294 / – pF Reverse Transfer Capacitance C res – / 85 / – pF Turn-On Delay Time T d(on) V CE = 400V, I C = 60A, R g = 10Ω, V GE = 15V, Inductive Load – / 36 / – ns Rise Time T r – / 142 / – ns Turn-Off Delay Time T d(off) – / 193 / – ns Fall Time T f – / 136 / – ns Turn-On Switching Loss E on V CE = 400V, I C = 60A, R g = 10Ω, V GE = 15V, Inductive Load – / 3.72 / – mJ Turn-Off Switching Loss E off – / 1.77 / – mJ Total Switching Loss E st – / 5.49 / – mJ Total Gate Charge Q g V CE = 400V, I C = 60A, V GE = 15V – / 179 / – nC Gate to Emitter Charge Q ge – / 23 / – nC Gate to Collector Charge Q gc – / 100 / – nC ELECTRICAL CHARACTERISTICS – FRD (TC = 25°C unless otherwise noted) Characteristic Symbol Test Condition Min. / Typ. / Max. Unit Diode Forward Voltage V FM I F = 30A, TC = 25°C – / 1.9 / 2.6 V Diode Forward Voltage V FM I F = 30A, TC = 125°C – / 1.5 / – V Diode Reverse Recovery Time T rr I ES = 30A, dI ES /dt = 200A/µs – / 38 / – ns Diode Reverse Recovery Charge Q rr I ES = 30A, dI ES /dt = 200A/µs – / 85 / – nC Applications Induction Heating Uninterruptible Power Supplies (UPS) Switched-Mode Power Supplies (SMPS) Power Factor Correction (PFC) Package Content 1 x Silan 60N60FD1 Field Stop IGBT with Fast Recovery Diode 600V 60A TO-3P DataSheet 60N60FD1

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