IRFB3607 N-Channel MOSFET Transistor 75V 80A

Description

IRFB3607 N-Channel MOSFET Transistor 75V 80A The IRFB3607 N-Channel MOSFET Transistor 75V 80A is a high-performance power semiconductor device designed for superior efficiency in switching and rectification applications. As an N-channel enhancement-mode MOSFET, it controls current flow between drain and source via gate voltage, offering robust operation in high-frequency and hard-switched environments. With a drain-source voltage rating of 75V, it handles substantial power levels, supporting continuous drain currents up to 80A at 25°C case temperature and 56A at 100°C, making it suitable for systems requiring reliable performance under thermal stress. Features: High drain-source voltage rating of 75V for robust voltage handling. Continuous drain current up to 80A for high-power applications. Low on-resistance of 9.0mΩ maximum for reduced conduction losses. Enhanced avalanche and dv/dt ruggedness for reliable operation. Specifications: Parameter Value Brand INTERNATIONAL RECTIFIER Transistor Type N-MOSFET Maximum Voltage Drain-Source (Uds) 75 V Maximum Drain Current 80 A Operating Temperature -55~175 °C Drain-Source Resistance at 25°С 9 mohm Power (Pd) 140 W Housing TO-220 Maximum Voltage Gate-Source (Ugs) ±20 V Model IRFB3607 Mounting THT Pin Configuration: Package Include: 1x IRFB3607 N-Channel MOSFET Transistor 75V 80A Datasheet

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