FQA19N60 N-Channel MOSFET Transistor 200V 23A TO-3P

Description

FQA19N60 N-Channel MOSFET Transistor 200V 23A TO-3P The FQA19N60 is an N-channel enhancement-mode power MOSFET from the QFET® family, designed for high-voltage switching applications. It is rated for a 600 V drain-source voltage and a continuous drain current of 18.5 A at 25°C, with a maximum drain-source on-state resistance of 380 mΩ at VGS = 10 V and ID = 9.3 A. The device uses planar stripe and DMOS technology to provide low on-state resistance, good switching performance, and high avalanche-energy capability. The FQA19N60 is housed in a TO-3P through-hole package with three terminals: Gate, Drain, and Source. Its characteristics make it suitable for power conversion and switching circuits where high voltage handling and reliable switching are required. The datasheet specifically identifies switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts as suitable applications. Features: N-channel enhancement-mode power MOSFET. QFET® technology. High 600 V drain-source voltage capability. Low drain-source on-state resistance. Low gate charge for efficient switching. Low reverse-transfer capacitance. Fast switching performance. 100% avalanche tested. Improved dv/dt capability. High avalanche-energy capability. Through-hole TO-3P package. Specifications: Parameter Value Transistor Type N-Channel MOSFET Technology Enhancement Mode Drain-Source Voltage (VDS) 600 V Continuous Drain Current (ID) @ 25°C 18.5 A Continuous Drain Current @ 100°C 11.7 A Pulsed Drain Current (IDM) 74 A Drain-Source On-Resistance (RDS(on)) 380 mΩ max RDS(on) Test Conditions VGS = 10 V, ID = 9.3 A Gate-Source Voltage (VGS) ±30 V Gate Threshold Voltage (VGS(th)) 5 V max Typical Gate Charge 70 nC Single Pulsed Avalanche Energy 1150 mJ Repetitive Avalanche Energy 30 mJ Power Dissipation 300 W @ TC = 25°C Operating / Storage Temperature -55°C to +150°C Package TO-3P / TO-3PN Mounting Through Hole Number of Pins 3 Pinout: Pin Name Function 1 Gate (G) Controls the MOSFET switching 2 Drain (D) High-current drain terminal 3 Source (S) Source/current return terminal Applications: Switch-mode power supplies (SMPS). Active Power Factor Correction (PFC). Electronic lamp ballasts. High-voltage switching circuits. Power conversion circuits. Inverters and power control circuits. General-purpose high-voltage switching applications. Package Included: 1 × FQA19N60 N-Channel MOSFET Transistor 200V 23A TO-3P. Documents: FQA19N60 Datasheet.

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