2SK2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262
EGP 50
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2SK2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262 The 2SK2889 (K2889) from Toshiba is an enhancement-mode N-Channel power MOSFET built for demanding power electronics applications. It features a 600V drain-source voltage rating and can handle up to 10A continuous drain current while maintaining a low on-state resistance that minimizes conduction losses. The rugged TO-262 package allows efficient heat dissipation and easy mounting to a heatsink, making it ideal for SMPS circuits, DC-DC converters, motor control systems, and industrial switching applications. Features: N-Channel enhancement-mode MOSFET. High voltage capability up to 600V. Continuous drain current up to 10A. Low on-state resistance (0.54Ω). Excellent thermal and power dissipation performance. Designed for SMPS and motor drive circuits. TO-262 through-hole package. Specifications: Parameter Symbol Value Unit Part Number: — 2SK2889 (K2889) — Transistor Type: — N-Channel MOSFET — Package: — TO-262 — Drain-Source Voltage: VDS 600 V Gate-Source Voltage: VGS ±30 V Continuous Drain Current: ID 10 A Pulse Drain Current: IDP 40 A Drain-Source On Resistance: RDS(on) 0.54 Ω Power Dissipation: PD 100 W Junction Temperature: TJ −55 to +150 °C Pinout: Pin Name Description 1 Gate Control terminal 2 Drain High-voltage power terminal 3 Source Output / return terminal Applications: Switching Mode Power Supplies (SMPS). DC-DC converters. Motor control circuits. Industrial power switching. High-voltage regulators. Packages: 1x K2889 Toshiba N-Channel Power MOSFET Transistor 600V 10A TO-262. Documents: Datasheet
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