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FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F
FQPF20N60C

FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F

Out of stockTransistors & MOSFETsVerified 2 days ago

EGP 25

Makers Electronics

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Description

FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F The FQPF20N60C is an N-Channel enhancement mode power MOSFET designed for high-voltage switching applications. Fabricated using advanced SuperFET® technology from ON Semiconductor , it features a maximum drain-source voltage of 600V and a continuous drain current of 20A. With a low on-state resistance and ultra-low gate charge, it offers excellent switching performance and efficiency. The TO-220F package provides full encapsulation for enhanced thermal insulation, making it suitable for applications such as switched-mode power supplies, LCD and plasma TV power circuits, and industrial power systems. Its robust design supports high-energy pulses in avalanche and commutation modes, ensuring reliability in demanding environments. Features: The FQPF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance. Robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Pin Configurations: Specifications: Product Attribute Attribute Value Datasheet FQPF20N60C Product Category MOSFETs Technology Si Series 20N60 Model FQPF20N60C Transistor Type N-Channel Number of Channels 1 Channel Configuration Single Package/Case TO-220F Mounting Type Through Hole Number of terminals 3 Vds – Drain-Source Breakdown Voltage 600 V Id – Continuous Drain Current 20 A Rds On – Drain-Source Resistance(Max.) 0.37 Ω Vgs – Gate-Source Voltage – 30 V, + 30 V Pd – Power Dissipation 50 W Typical Fall Time 88 ns Typical Rise Time 125 ns Typical Turn-Off Delay Time 128 ns Typical Turn-On Delay Time 57 ns Operating Temperature Range -55 ℃ to +150 ℃ Applications: Industrial power applications. UPS. Solar Inverter. AC-DC Power Supply. DC-DC Converters. Server/Telecom power. lighting ballasts. Motion control. Datasheet: FQPF20N60C

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FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F · makhzan