2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole

Description

2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole The 2N6124 is a silicon PNP power transistor in a through-hole TO-220 package, engineered to serve as a rugged switching and amplification device in power electronics. Its design emphasises robust handling of collector-emitter stresses and reliable electrical behavior under repetitive switching conditions. The device’s mechanical format (TO-220) enables easy mounting and effective heat sinking for sustained power operation. Electrically, the transistor is intended to deliver controlled, predictable PNP switching performance across a range of drive conditions. The datasheet frames the device for use where stable gain and repeatable saturation characteristics are required, noting that drive margins and saturation behavior have been optimized to support both continuous and pulsed loads. Thermal design guidance and ratings are provided to help ensure that the transistor maintains performance when subjected to high dissipation and temperature stresses. Emphasis in the datasheet is placed on manufacturing consistency and long-term reliability, making the 2N6124 suitable for demanding power amplifier and switching roles in consumer and industrial equipment. The combination of a robust semiconductor process, conservative thermal limits, and a common through-hole package helps designers integrate the part into systems that require straightforward mounting, maintainable cooling, and predictable service life. Features: Silicon PNP power transistor (TO-220 through-hole). Complement to type 2N6121. Minimum lot-to-lot variations for robust device performance and reliable operation. Specifications: Product Attribute Attribute Value Product Category: Bipolar Transistors – BJT Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: PNP Configuration: Single Maximum DC Collector Current: 4 A Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 45 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.4 V Pd – Power Dissipation: 40 W Gain Bandwidth Product fT: 2.5 MHz Minimum Operating Temperature: – 65 C Maximum Operating Temperature: + 150 C Series: 2N61 Continuous Collector Current: 4 A DC Collector/Base Gain hFE Min: 25 DC Current Gain hFE Max: 100 Applications: Power amplifier circuits. Switching circuits. Package Contents: 1x 2N6124 Bipolar (BJT) Single Transistor PNP 45V 4A 40W TO-220 Through Hole 2N6124 Datasheet

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