K1363 N-Channel MOSFET Transistor 900V 8A TO-3P
EGP 30
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K1363 N-Channel MOSFET Transistor 900V 8A TO-3P The 2SK1363 is a high-voltage, high-speed switching power MOSFET developed by Toshiba. It is constructed using a silicon N-channel MOS process and their proprietary π-MOS II.5 technology, designed to deliver efficient performance in applications requiring fast switching and high current handling. This transistor is characterized by its low drain-source ON resistance (typically 1.1Ω) and high forward transfer admittance (typically 4.0 S), which contribute to reduced conduction losses and improved efficiency. It is an enhancement-mode device, meaning it requires a positive gate voltage to conduct, with a gate threshold voltage ranging from 1.5V to 3.5V. Housed in a TO-3P package, the 2SK1363 is rated for a drain-source voltage of 900V and a continuous drain current of 8A, making it suitable for demanding power applications. The device also features low leakage current and built-in source-drain diode, and it is important to note that it is an electrostatic sensitive device requiring careful handling during installation. Features: Low Drain-Source ON Resistance: RDS(ON) = 1.1Ω High Forward Transfer Admittance: |Yfs| = 4.0 S Low Leakage Current: IDSS = 300 μA (Max.) @ VDS = 720V Enhancement-Mode: Vth = 1.5V to 3.5V @ VDS = 10V, ID = 1mA Specifications: CHARACTERISTIC SYMBOL VALUE UNIT Absolute Maximum Ratings (Ta = 25°C) Drain-Source Voltage: VDSS 900 V Drain Current (DC): ID 8 A Drain Power Dissipation (Tc=25°C): PD 90 W Channel Temperature: Tch 150 °C Electrical Characteristics (Ta = 25°C) Drain-Source Breakdown Voltage: V(BR)DSS 900 (Min.) V Drain-Source ON Resistance: RDS(ON) 1.4 (Max.) Ω Input Capacitance: Ciss 1800 (Max.) pF Total Gate Charge: Qg 240 (Max.) nC Applications: Switch- mode power supplies. High- voltage inverters. Motor drive front- ends. Industrial power converters. Inductive load switching. Package Contents: 1x K1363 N-Channel MOSFET Transistor 900V 8A TO-3P Datasheet
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