2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original

Description

2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original The 2N7000 is a compact N-channel enhancement-mode MOSFET designed for signal-level switching and low-power control. It uses onsemi’s high-density DMOS cell structure to minimize on-state resistance while keeping package size small. Engineered for predictable gate behavior, it accepts modest gate voltages and is straightforward to drive from logic signals or microcontroller GPIOs, making circuit integration fast and reliable. Optimized for fast switching at low currents, the device delivers consistent performance across a wide temperature range and handles short pulsed currents above its continuous rating. Its low input capacitance and modest gate charge reduce switching losses in small-signal applications. Designers value its clean turn-on and turn-off transitions for avoiding unwanted oscillation in sensitive analog and mixed-signal circuits. Offered in both through-hole (TO-92) and surface-mount (SOT-23) package CASE 135AR, the 2N7000 suits both prototyping and space-constrained production uses. Its combination of ruggedness, simple gate requirements, and low thermal demands makes it ideal for signal-level switching, level shifting, and driver roles in consumer electronics, industrial controls, and hobbyist projects. Its simple handling and robust tolerance simplify assembly and maintenance in varied environments. Features: High density DMOS cell design for low RDS(on). Voltage-controlled small-signal switching behavior. Rugged and reliable construction. High saturation and pulsed current capability. Pb-Free and halogen-free manufacturing. Specifications: Parameter Symbol Value Conditions Unit Absolute Maximum Ratings Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGS ±20 Continuous V Continuous Drain Current ID 200 TC = 25°C mA Pulsed Drain Current IDM 500 mA Maximum Power Dissipation PD 400 TC ≤ 25°C mW Thermal Characteristic Junction-to-Ambient Thermal Resistance RθJA 312.5 °C/W Electrical Characteristics Drain-Source Breakdown Voltage BVDSS 60 min VGS = 0 V, ID = 10 µA V Gate Threshold Voltage VGS(th) 0.8 – 3.0 VDS = VGS, ID = 1 mA V Static Drain-Source On-Resistance RDS(on) 5 max VGS = 10 V, ID = 500 mA Ω Static Drain-Source On-Resistance RDS(on) 5.3 max VGS = 4.5 V, ID = 75 mA Ω Zero Gate Voltage Drain Current IDSS 1 max VDS = 48 V, VGS = 0 V µA Forward Transconductance gfs 100 min VDS = 10 V, ID = 200 mA mS Dynamic Characteristics Input Capacitance Ciss 20 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Output Capacitance Coss 11 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Reverse Transfer Capacitance Crss 4 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Turn-On Time ton 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Turn-Off Time toff 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Pinout Diagram: Footprint Diagram: Applications: Low-Side Switching for Microcontroller Loads. Logic Level Signal Inversion. Driving Small Relays and Solenoids. LED Lighting Control and Dimming. Multiplexing Digital Signals (Analog Switch). Motor Direction Control in H-Bridge Circuits. Protecting Input/Output Pins with Clamp Diodes. Simple Oscillator and Waveform Generator Circuits. Level Shifting Between Different Voltage Domains. Solid-State Relay for Low-Power Applications. Package Contents: 1x 2N7000 N-Channel Small MOSFET Signal 60V, 200mA TO−92 CASE 135AR – Original Datasheet

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