
IXTQ50N25P MOSFET Transistor 250V 50A TO-3P
EGP 80
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IXTQ50N25P MOSFET Transistor 250V 50A TO-3P The IXTQ50N25P is a high-power N-channel MOSFET designed for switching and power-control circuits that require high voltage and high current handling. Its TO-3P through-hole package provides a mechanically robust format suitable for power electronic assemblies and applications where thermal management is important. This MOSFET can be used in power supplies, DC-DC converters, motor control circuits, battery-powered systems, inverter stages, and other high-power switching applications. It is particularly suitable for circuits requiring efficient electronic switching and substantial current-handling capability. Features: N-channel power MOSFET. High-power switching device. Through-hole TO-3P package. Suitable for power electronic circuits. Designed for high-current switching applications. Suitable for circuits requiring efficient electronic switching. Compatible with heatsink-based thermal management. Specifications: Specification Details Part Number IXTQ50N25P Transistor Type N-Channel MOSFET Maximum Drain-Source Voltage (VDS) 250 V Maximum Continuous Drain Current (ID) 50 A Package TO-3P Mounting Type Through Hole Number of Pins 3 Device Type Power MOSFET Pinout: Pin Function 1 Gate (G) 2 Drain (D) 3 Source (S) Applications: High-current switching. Power supplies. DC-DC converters. Inverter circuits. Motor control. Battery power systems. Power management circuits. Industrial switching applications. High-power electronic projects. Packages Included: 1 × IXTQ50N25P MOSFET Transistor 250V 50A TO-3P. Documents: IXTQ50N25P Datasheet.
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