IRF830 N-Channel MOSFET 500V 4.5A TO-220

Description

IRF830 N-Channel MOSFET 500V 4.5A TO-220 The IRF830 is a high-voltage N-Channel enhancement-mode power MOSFET designed for applications requiring efficient switching of high-voltage loads. Featuring a maximum drain-to-source voltage of 500V and a continuous drain current rating of 4.5A, the device is widely used in power supplies, inverter circuits, motor control systems, and industrial switching applications. The TO-220 package provides excellent thermal performance and allows convenient mounting to a heatsink when higher power dissipation is required. Features: N-Channel enhancement-mode power MOSFET. High drain-source voltage rating of 500V. Continuous drain current up to 4.5A. TO-220 through-hole package. Fast switching performance. Low gate charge characteristics. Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page Specifications: Parameter Value Part Number IRF830 Transistor Type N-Channel MOSFET Mounting Type Through Hole Package TO-220 Drain-Source Voltage (VDS) 500V Continuous Drain Current (ID) 4.5A Gate-Source Voltage (VGS) ±20V Drain-Source Resistance (RDS(on)) 1.5Ω Max Power Dissipation (PD) 75W Gate Charge (Qg) 27nC Typical Rise Time 16ns Typical Fall Time 16ns Typical Operating Temperature -55°C to +150°C Number of Pins 3 Pin Configuration: Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 4.5A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Applications: Switching high power devices Inverter Circuits DC-DC Converters Control speed of motors LED dimmers or flashers High Speed switching applications Package Include: 1x IRF830 N-Channel MOSFET 500V 4.5A TO-220 Datasheet

From the supplier's page.