HGTG10N120BND
HGTG10N120BND NPT N-Channel IGBT Transistor TO-247 (1200V, 35A)
EGP 20
See other suppliers →Description
Specifications: Product Attribute Attribute Value Product Category: IGBTs Technology: Si Package/Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: – 20 V, 20 V Continuous Collector Current at 25 C: 35 A Pd – Power Dissipation: 298 W Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Series: HGTG10N120BND Continuous Collector Current: 35 A Continuous Collector Current Ic Max: 35 A Gate-Emitter Leakage Current: +/- 250 nA Product Type: IGBT Transistors HGTG10N120BN Datasheet
From the supplier's page.
Visit Makers Electronics
makhzan doesn't sell — every offer opens the supplier's own site.