2SD2103 NPN Transistor 60V 8A TO-220FM

Description

2SD2103 NPN Transistor 60V 8A TO-220FM The 2SD2103 from Hitachi is a high-gain NPN power transistor manufactured using triple diffusion planar technology. It is optimized for low frequency power amplifier circuits, delivering robust performance with collector currents up to 8A continuous (12A peak) and collector-emitter voltages up to 60V. The device exhibits exceptionally high DC current gain (hFE) ranging from 1000 to 20000, making it suitable for applications requiring large current amplification with minimal drive current. Its low collector-emitter saturation voltage (max 1.5V at 4A) ensures efficient operation with reduced power dissipation. This transistor is housed in a standard through-hole package (likely TO-220), allowing easy mounting on heatsinks for improved thermal management. With a junction temperature rating of 150°C and power dissipation of 2W at 25°C ambient (higher when heatsinked), the 2SD2103 provides reliable performance in audio amplifiers, power regulators, and general switching circuits. Its high current gain simplifies driver stage design, enabling direct drive from low-power signal sources. However, users should note that this device is not intended for high-frequency applications, as its switching characteristics are referenced to the 2SD1572 series. Features: Silicon NPN triple diffused planar technology. Extremely high DC current gain. Low collector-emitter saturation voltage. Low base-emitter saturation voltage. Designed for low frequency power amplification. Robust peak current handling capability. Suitable for complementary use with PNP counterparts. Specifications: Parameter Symbol Min Typ Max Unit Test Conditions Collector to base voltage VCBO 60 – – V Ic = 0.1 mA, Ie = 0 Collector to emitter voltage VCEO 60 – – V Ic = 25 mA, RBE = ∞ Emitter to base voltage VEBO 7 – – V Ie = 50 mA, Ic = 0 Collector cutoff current ICBO – – 10 μA VCB = 50 V, Ie = 0 Collector cutoff current ICEO – – 10 μA VCE = 50 V, RBE = ∞ DC current transfer ratio hFE 1000 – 20000 – VCE = 3 V, Ic = 4 A* Collector to emitter saturation voltage VCE(sat)1 – – 1.5 V Ic = 4 A, IB = 8 mA* Collector to emitter saturation voltage VCE(sat)2 – – 3.0 V Ic = 8 A, IB = 80 mA* Base to emitter saturation voltage VBE(sat)1 – – 2.0 V Ic = 4 A, IB = 8 mA* Base to emitter saturation voltage VBE(sat)2 – – 3.5 V Ic = 8 A, IB = 80 mA* Pinout: Pin Name Description 1 Base Control terminal 2 Collector Connected to tab (heatsink) 3 Emitter Ground/return terminal Applications: Low frequency power amplifiers. Audio output stages. Power regulators. General purpose switching circuits. High-gain driver stages. Complementary power transistor pairs. Packages Included: 1x 2SD2103 NPN Transistor 60V 8A TO-220FM. Documents: 2SD2103 Datasheet.

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