Bipolar Transistors – BJT NPN TO-3PL C3998
EGP 60
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Features High Switching Speed High Breakdown Voltage-: V(BR)CBO= 1500V(Min) Applications Designed for horizontal deflection output applications. Mfr. Part # 2SC3998 Package TO-3PL Datasheet 2SC3998 Description 10uA 800V 250W 4@20A,5V 25A 5V@20A,5A NPN +150℃@(Tj) TO-3PL Bipolar Transistors – BJT ROHS Specifications Attribute Value Category Triode/MOS Tube/Transistor/Bipolar Transistors – BJT Datasheet 2SC3998 RoHS Collector Cut-Off Current (Icbo) 10uA Collector-Emitter Breakdown Voltage (Vceo) 800V Power Dissipation (Pd) 250W DC Current Gain (hFE@Ic,Vce) 4@20A,5V Collector Current (Ic) 25A Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 5V@20A,5A Transistor Type NPN Operating Temperature +150℃@(Tj)
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