GOODWORK SI2302 N-Channel MOSFET Transistor SMD 1.1V@250uA SOT-23
EGP 3
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GOODWORK SI2302 N-Channel MOSFET Transistor SMD 1.1V @ 250µA, SOT-23 The GOODWORK SI2302 N-Channel MOSFET Transistor SMD 1.1V @ 250µA, SOT-23 is a compact and efficient transistor designed for low-voltage switching applications. With a gate threshold voltage (Vgs(th)) of just 1.1V, it ensures reliable operation in low-power circuits. The transistor features a maximum drain-source voltage (Vds) of 20V and can handle a continuous drain current (Id) of up to 2.3A, making it suitable for a wide range of electronic devices. Features: High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Specifications: Category Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs Manufacturer GOODWORK Package SOT-23 Drain to Source Voltage 20V Current – Continuous Drain (Id) 4.3A Pd – Power Dissipation 1.2W RDS(on) 50mΩ@2.5V Gate Threshold Voltage (Vgs(th)) 1.1V@250uA Type N-Channel Reverse Transfer Capacitance (Crss@Vds) 80pF Number 1 N-Channel Input Capacitance (Ciss) 300pF Gate Charge (Qg) 10nC@4.5V Foot Print: Applications: Used in precision signal processing and filtering circuits. Ideal for low-power voltage regulation. Suitable for consumer electronics like smartphones, tablets, and IoT devices. Common in automotive electronics, where temperature stability is crucial. Applied in medical devices that require reliable performance under varying environmental conditions. Documents: Attribute Value Datasheet SI2302 Certifications Quality Management System Environmental Management System Certifications REACH RoHS
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