FQPF80N06
FQPF80N06 MOSFET Transistor TO-220F
EGP 15
See other suppliers →Description
Specifications: Type Designator: FQPF80N06 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 176 W Maximum Drain-Source Voltage |Vds|: 60 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 80 A Maximum Junction Temperature (Tj): 150 °C Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm Package: TO-220F
From the supplier's page.
Visit Makers Electronics
makhzan doesn't sell — every offer opens the supplier's own site.