75P06 P-Channel MOSFET Transistor 60V 75A TO-263 SMD
EGP 30
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75P06 P-Channel MOSFET Transistor 60V 75A TO-263 SMD The 75 P06 SMD Transistor is a high‑performance P‑Channel MOSFET designed for surface‑mount applications requiring robust switching and power handling. This device is housed in a surface‑mount package, providing an excellent balance of thermal dissipation, mechanical reliability, and compact footprint for modern PCB assemblies. It is engineered to support continuous drain currents up to 75 A and can withstand a drain‑to‑source voltage of 60 V, making it suitable for low‑side and high‑side switching roles, DC‑DC converters, and power management circuits. Features: P-Channel enhancement mode for efficient high-side switching. Low on-resistance of 12mΩ at -10V gate drive. High continuous drain current capability up to -75A. Logic-level gate threshold for easy interfacing with microcontrollers. Specifications: Parameter Value Drain Source Voltage -60V Continuous Drain Current -75A Power Dissipation 107W On Resistance 12mΩ Gate Threshold Voltage -1.8V Total Gate Charge 139nC Input Capacitance 8699pF Reverse Transfer Capacitance 209pF Operating Temperature -55°Cto+175°C Package Type TO-263 Pinout: Applications: High‑side switching in DC‑DC converters and power management circuits. Battery protection and power distribution systems. Load switching in automotive and industrial applications. Reverse polarity protection circuits. General SMD power MOSFET switching applications. Package Include: 1x 75P06 P-Channel MOSFET Transistor 60V 75A TO-263 SMD. Datasheet: 75P06
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