AOD414 SMD N-Channel TO-252 MOSFET

Description

General Description The AOD414 uses advanced trench technology to provide excellent R DS(ON) , shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Features V DS (V) = 30V I D = 85A (V GS = 10V) R DS(ON) < 5.2mW (V GS = 10V) R DS(ON) < 7.0mW (V GS = 4.5V) Specification Absolute Maximum Ratings T A =25°C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current B,G T C =25°C G I D 85 A T C =100°C B 66 Pulsed Drain Current IDM 200 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.1mH C EAR 140 mJ Power Dissipation B T C =25°C P D 100 W T C =100°C 50 Power Dissipation A T A =25°C PDSM 2.5 W T A =70°C 1.6 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s RqJA 14.2 20 °C/W Maximum Junction-to-Ambient A Steady-State 40 50 °C/W Maximum Junction-to-Case C Steady-State RqJC 0.56 1.5 °C/W AOD414 Datasheet

From the supplier's page.